Passively Q-switched Er:YAG laser operating at 1617 nm at low pump power level

Passively Q-switched Nd:YAG/KTA laser at 561 nm

High average power 1314 nm Nd:YLF laser, passively Q-switched with V:YAG.

A 1314 nm Nd:YLF laser was designed and operated both CW and passively Q-switched. Maximum CW output of 10.4 W resulted from 45.2 W of incident pump power. Passive Q-switching was obtained by inserting a V:YAG saturable absorber in the cavity. The oscillator delivered a maximum of 825 μJ energy per pulse, with a pulse duration of 135 ns at a pulse repetition frequency of 6.3 kHz, effectively de...

Passively Q-switched diode-pumped Er:YAG solid-state laser.

We demonstrated laser operation of a passively Q-switched diode-pumped Er:YAG solid-state laser emitting at 1645 or 1617 nm depending on the initial transmission of the Cr:ZnSe saturable absorber. The crystal emitted up to 10 W at 1645 nm and up to 8 W at 1617 nm in CW mode while pumped with 65 W of incident pump power at 1533 nm. In passive Q-switched mode with 40 W of incident power, a Cr:ZnS...

Passively Q-switched Nd:YAG pumped UV lasers at 280 and 374 nm

Pulsed UV lasers at the wavelengths of 374 and 280 nm are realized by cascaded second harmonic generation (SHG) and sum frequency generation (SFG) processes using a Nd:YAG laser at 1123 nm. The Nd:YAG laser is longitudinally pumped and passively Q-switched, and it has a high peak power of 3.2 kW. The UV peak powers at 280 and 374 nm are 100 and 310 W, with pulse lengths of 6 and 8 ns, respectiv...

InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm.

A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.